to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors BC347 transistor (npn) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a collector cut-off current i ceo v ce =35v,i b =0 0.1 a emitter cut-off current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe v ce =5v, i c =2ma 40 450 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v base-emitter saturation voltage v be(sat) i c =10ma,i b =1ma 1 v transition frequency f t v ce =5v,i c =10ma,f=30mhz 125 mhz symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.1 a p c collector power dissipation 0.3 w r ja thermal resistance from junction to ambient 416 /w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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